PART |
Description |
Maker |
E28F160S5-100 E28F320S5-90 28F160S5 DA28F160S5-100 |
WORD-WIDE FLASHFILE MEMORY FAMILY
|
INTEL[Intel Corporation]
|
E28F004SC-85 28F008SC 28F016SC G28F008SC-150 G28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT 8-MBIT SmartVoltage FlashFile Memory(8M位智能电压闪速存储器) 16-MBIT SmartVoltage FlashFile Memory(16M位智能电压闪速存储器) BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 85 ns, PDSO44 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 字节宽SmartVoltage FlashFile Memory系列486兆比 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 120 ns, PDSO44 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 100 ns, PDSO44 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 2M X 8 FLASH 3.3V PROM, 120 ns, PDSO44
|
Intel Corporation Intel Corp. Intel, Corp.
|
28F016S5 28F008S5 PA28F004S5-85 E28F008S5-85 PA28F |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
|
Intel
|
28F160S3 |
3 V FlashFile Memory(3 V FlashFile 存储
|
Intel Corp.
|
MSM518222 MSM518222-25JS MSM518222-30JS MSM518222- |
From old datasheet system 262214-Word x 8-Bit Field Memory 262,214-Word x 8-Bit Field Memory
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
DT28F016SV-080 DT28F016SV-100 E28F016SV-070 E28F01 |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
|
INTEL[Intel Corporation]
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY 32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M6MGB_T160S2BVP M6MGB E99003_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|
|